2N 3055
$2.00
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isc Silicon NPN Power Transistor APPLICATIONS
·Designed for general-purpose switching and amplifier applications
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
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isc Silicon NPN Power Transistor APPLICATIONS
·Designed for general-purpose switching and amplifier applications