2SC5296
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  • 2SC5296

2SC5296

$1.40
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 Silicon NPN Power Transistors

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Features
• High speed : tf=100ns typ.
• High breakdown voltage : VCBO=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.

 

Type Designator: 2SC5296

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Forward Current Transfer Ratio (hFE), MIN: 15

 

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