IRFP 150M
$2.00
Tax included
N-Channel MOSFET
·FEATURES
·Static drain-source on-resistance: RDS(on)≤36mΩ
·Enhancement mode: ·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION
·Fast switching
·Fully Avalanche Rated
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