IRFP 240

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of energy

in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications

such as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types can be

operated directly from integrated circuits.