IRFP 4668
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  • IRFP 4668

IRFP 4668

$4.25
Tax included

N-Channel MOSFET Transistor 200v/130A

  • Static drain-source on-resistance :

 

RDS(on)≤9.7mΩ                                            
  •  ·Enhancement mode:  Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA)
  •  ·100% avalanche tested ·Minimum Lot-to-Lot variations 

             for robust device performance and reliable operation

 

·DESCRITION ·High Efficiency Synchronous Rectification in SMPS

 ·Uninterruptible Power Supply

 ·High Speed Power Switching

 ·Hard Switched And High

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