GP4066D

INSULATED GATE BIPOLAR TRANSISTOR

 WITH ULTRAFAST SOFT RECOVERY DIODE

• Low VCE (ON) Trench IGBT Technology

 • Low Switching Losses

 • Maximum Junction Temperature 175 °C

• 5 μS short circuit SOA • Square RBSOA

 • 100% of The Parts Tested for ILM

 • Positive VCE (ON) Temperature Coefficient

• Tight Parameter Distribution

• Lead Free Package