GP4068D

$4.25

Tax included

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR

INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 μS short circuit SOA • Square RBSOA

• 100% of the parts tested for ILM

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyper fast Diode

• Tight parameter distribution

• Lead Free Package

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