IRFB 3206
$2.25
Tax included
N-Channel MOSFET 60v/210A
- Static drain-source on-resistance: RDS(on) ≤3mΩ
- ·Enhancement mode
- ·Fast Switching Speed
- ·100% avalanche tested
- ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
- High Efficiency Synchronous Rectification in SMPS
- ·Uninterruptible Power Supply
- ·Hard Switched and High Frequency Circuits
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N-Channel MOSFET 60v/210A
- Static drain-source on-resistance: RDS(on) ≤3mΩ
- ·Enhancement mode
- ·Fast Switching Speed
- ·100% avalanche tested
- ·Minimum Lot-to-Lot variations for robust device performance and reliable operation