
· Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.)
· High forward transfer admittance: |Yfs| =8.2 S (typ.)
· Low leakage current: IDSS = 100 μA (VDS = 500 V)
· Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)