SSP 5N60C

600V N-Channel MOSFET Features

■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V

■ Gate charge (Typical 27nC)

■ High ruggedness

■ Fast switching

■ 100% AvalancheTested

■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors.