![SSP 8N60](https://abouelzahab.com/340-large_default/t-8n60.jpg)
![SSP 8N60](https://abouelzahab.com/340-large_default/t-8n60.jpg)
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* VDS = 600V
* ID = 7.5A
* RDS(ON) = 1.2Ω@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness