FIR 80N075P

N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good hea.