40N120FDR
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  • 40N120FDR

40N120FDR

$5.50
Tax included

Field stop Trench IGPT

Features
• 1200V Field Stop Trench Technology
• High Speed Switching
• Lo w Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Opera tion
• Short Circuit Withstanding Tim e 5μs
• RoHS Compliant
• JEDEC Qualification Applications UPS, Welder, Inverter, Solar TGAN40N120FDR Field Stop Trench IGBT E GC Device TGAN40N120FDR Package TO-3PN Marking TGAN40N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation .

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