FQP42N10
$2.25
Tax included
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
■Extremely high dv/dt capability
■Low Gate Charge Qg results in Simple Drive Requirement
■100% avalanche tested
■Gate charge minimized
■Very low intrinsic capacitances
■Very good manufacturing repeatability
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StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.