FDA 69N25
250V N-Channel MOSFET
Description balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. |
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra Low Gate Charge ( Typ. Qg = 34 nC)
• Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF)
• 100% Avalanche Tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply