SC8050
$0.50
Tax included
NPN Silicon
■■APPLICATION：POWER AMPLIFIER APPLICATION,SWITCH APPLICATION
■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Collector Power Dissipation PC 800 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ SC8050 —NPN silicon —
■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITION DC Current Gain hFE 85 300 VCE= 1 V，Ic= 100 mA Collector Cut-off Current ICBO 0.
1 µA VCB= 35 V，IE=0 Emi.
Transistor 2SC 8050 NPN, 40 V, 2.0 A, TO-92
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NPN Silicon
■■APPLICATION：POWER AMPLIFIER APPLICATION,SWITCH APPLICATION
■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Collector Power Dissipation PC 800 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ SC8050 —NPN silicon —
■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITION DC Current Gain hFE 85 300 VCE= 1 V，Ic= 100 mA Collector Cut-off Current ICBO 0.
1 µA VCB= 35 V，IE=0 Emi.