GW60H65DFB
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  • GW60H65DFB

GW60H65DFB

$3.75
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• Maximum junction temperature: TJ = 175 °C

 • High speed switching series

 • Minimized tail current

 • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

 • Tight parameter distribution

 • Safe paralleling

• Positive VCE(sat) temperature coefficient

 • Low thermal resistance

 • Very fast soft recovery antiparallel diode

 

These devices are IGBTs developed using an advanced proprietary trench gate field[1]stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

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